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| SUD06N10-225L Vishay Siliconix N-Channel 100-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) 0.200 @ VGS = 10 V 0.225 @ VGS = 4.5 V ID (A) 6.5 6.0 Qg (Typ) 2.7 27 TO-252 D Drain Connected to Tab G D S G Top View Order Number: SUD06N10-225L SUD06N10-225L--E3 (lLead (Pb)-Free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)b Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle v 1%) Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IS IAR EAR PD TJ, Tstg Limit 100 " 20 6.5 3.75 8.0 6.5 5.0 1.25 20b 1.5a -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambienta J ti t A bi t Junction-to-Case Notes a. Surface Mounted on 1" x1" FR4 Board. b. See SOA curve for voltage derating. Document Number: 71253 S-42350--Rev. B, 20-Dec-04 www.vishay.com t v 10 sec Steady State Symbol RthJA RthJC Typical 40 80 6.0 Maximum 50 100 7.5 Unit _C/W C/W 1 SUD06N10-225L Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 100 V, VGS = 0 V Zero Gate Voltage Drain Current g On-State Drain Currentb IDSS ID(on) VDS = 100 V, VGS = 0 V, TJ = 125_C VDS = 100 V, VGS = 0 V, TJ = 175_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 3 A Drain-Source On-State Drain Source On State Resistanceb rDS( ) DS(on) VGS = 10 V, ID = 3 A, TJ = 125_C VGS = 10 V, ID = 3 A, TJ = 175_C VGS = 4.5 V, ID = 1.0 A Forward Transconductanceb gfs VDS = 15 V, ID = 3 A 0.180 8.5 8.0 0.160 0.200 0.350 0.450 0.225 S W 100 1.0 3.0 "100 1 50 250 A m mA V nA Symbol Test Condition Min Typa Max Unit Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 50 V, RL = 7.5 W ID ^ 6.5 A, VGEN = 10 V, Rg = 2.5 W VDS = 50 V, VGS = 5 V, ID = 6.5 A , , VGS = 0 V, VDS = 25 V, F = 1 MHz 240 42 17 2.7 0.6 0.7 7 8 8 9 11 12 12 14 ns 4.0 nC pF Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current Diode Forward Voltageb ISM VSD trr IF = 6.5 A, VGS = 0 V IF = 6.5 A, di/dt = 100 A/ms 0.9 35 8.0 1.3 60 A V ns Source-Drain Reverse Recovery Time Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71253 S-42350--Rev. B, 20-Dec-04 SUD06N10-225L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 15 VGS = 10 thru 5 V 15 TC = -55_C 12 I D - Drain Current (A) 12 I D - Drain Current (A) 25_C Transfer Characteristics 9 4V 9 125_C 6 6 3 3, 2 V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 3 0 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Transconductance 15 TC = -55_C 25_C 9 125_C 6 r DS(on)- On-Resistance ( W ) 12 g fs - Transconductance (S) 0.30 0.25 On-Resistance vs. Drain Current VGS = 4.5 V 0.20 0.15 0.10 0.05 0.00 VGS = 10 V 3 0 0 3 6 9 12 15 0 3 6 9 12 15 ID - Drain Current (A) 350 300 C - Capacitance (pF) 250 200 150 100 50 0 0 20 40 60 80 100 VDS - Drain-to-Source Voltage (V) Coss Crss Ciss ID - Drain Current (A) 10 VDS = 50 V ID = 6.5 A Capacitance Gate Charge V GS - Gate-to-Source Voltage (V) 8 6 4 2 0 0 1 2 3 4 5 Qg - Total Gate Charge (nC) Document Number: 71253 S-42350--Rev. B, 20-Dec-04 www.vishay.com 3 SUD06N10-225L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2.5 On-Resistance vs. Junction Temperature VGS = 10 V ID = 3 A Source-Drain Diode Forward Voltage 10 rDS(on) - On-Resiistance (Normalized) 2.0 I S - Source Current (A) 1.5 TJ = 175_C 1.0 TJ = 25_C 0.5 0.0 -50 -25 0 25 50 75 100 125 TJ - Junction Temperature (_C) 150 175 1 0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1.2 THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature 8 10 Safe Operating Area 10 ms *Limited by rDS(on) 6 I D - Drain Current (A) I D - Drain Current (A) 100 ms 4 1 1 ms 2 TC = 25_C Single Pulse 10 ms 0 0 25 50 75 100 125 150 175 TC - Case Temperature (_C) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 100 ms 1 s, dc 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Case 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-5 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 100 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71253. www.vishay.com Document Number: 71253 S-42350--Rev. B, 20-Dec-04 4 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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